Author(s):
Sonalee Kapoor, Khuswant Sehra, Niraj Kumar and D S Rawal

Abstract:
E-mode GaN HEMTs are the preferred device configuration for use in high power switching applications and this paper reports a TCAD study on p-GaN gate HEMT structure and device geometry to achieve high breakdown voltage for DC to DC power switching applications. Various HEMT device geometrical parameters have been studied as a function of device electrical parameters i. e. Drain current, threshold voltage Ron and breakdown voltage. The gate -drain spacing of greater than 10 µm is found to be the most critical dimension for achieving high breakdown voltage ~750 V but at the cost of device current handling capability which is found to be decreasing from 960 mA/mm to 900 mA/mm when gate drain spacing of 6um is increased to 10 µm.

Pages: 668-673

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