Author(s):
Marsha M. Parmar, Robert Laishram, Preeti Garg & D.S. Rawal
Abstract:
In recent years, high-electron-mobility GaN HEMTs have demonstrated significant
advancements in applications such as power converters and RF amplifiers. Nevertheless, their
thermal reliability poses a notable challenge, placing constraints on their power-handling
capacities. This study employs micro-Raman spectroscopy to evaluate the localized self-heating-
induced channel temperature. The channel temperature, determined using the single phonon modes
of GaN HEMT (E2(H) & A1(LO)), exhibits discrepancies and does not align with device
temperature values calculated using the SiC phonon peak near the GaN channel. However, by
employing both phonon modes of GaN to decouple the combined effects of joule heating and the
thermoelastic effect, accurate channel temperature values are obtained, matching well with those
obtained from the SiC phonon peak. The agreement between calculated temperatures from phonon
modes and those obtained by heating the device from the back side enhances the credibility of the
proposed method.
Pages: 109-114
Email Address: office@cnsejournals.org
