Author(s):
Chanchal, Khushwant Sehra, Amit Malik, Robert Laishram, D. S. Rawal, and Manoj Saxena
Abstract:
This manuscript investigates the DC performance of Ni/Au and Pt/Au Schottky Gate
contacts on 150 nm AlGaN/GaN HEMTs for Ku band applications. Comparison in terms of the
short channel effects (SCEs), in particularly the drain-induced barrier lowering (DIBL),
demonstrate the long-term stability of Ni/Au Schottky contacts for mm-wave applications. To
assess the reliability of the Schottky metal scheme, the fabricated devices were subjected to a high
gate reverse bias step stress of – 30 V with a step of – 5 V. A higher degree of ON–state resistance
(RON) degradation for the Pt/Au Schottky contact evinces remarkable performance of Ni/Au
Schottky contacts for mm-Wave applications.
Pages: 278-285
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